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IXTP42N25P の電気的特性と機能

IXTP42N25PのメーカーはIXYS Corporationです、この部品の機能は「Polar N-channel MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTP42N25P
部品説明 Polar N-channel MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTP42N25P Datasheet, IXTP42N25P PDF,ピン配置, 機能
www.DataSheet4U.com
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Advanced Technical Information
IXTQ 42N25P
IXTA 42N25P
IXTP 42N25P
VDSS =
ID25
RDS(on)
=
=
250 V
42 A
84 m
TO-3P (IXTQ)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 10
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
Maximum Ratings
250 V
250 V
±20 V
42 A
110 A
50 A
30 mJ
1.0 J
10 V/ns
G
DS
TO-220 (IXTP)
G DS
TO-263 (IXTA)
(TAB)
(TAB)
300
-55 ... +150
150
-55 ... +150
300
260
W GS
°C (TAB)
°C
°C
G = Gate
D = Drain
°C S = Source
TAB = Drain
°C Features
1.13/10 Nm/lb.in.
5.5 g
4g
3g
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
250 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
70 84 m
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99157A(05/04)

1 Page





IXTP42N25P pdf, ピン配列
www.DataSheet4U.com
45
40
35
30
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
25
7V
20
15
6V
10
5 5V
0
0 0.5 1 1.5 2 2.5 3 3.5
VD S - Volts
45
40
35
30
25
20
15
10
5
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
9V
8V
7V
6V
5V
12345678
VD S - Volts
4
9
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
4.6
4.2 VGS = 10V
3.8
3.4
3 TJ = 125ºC
2.6
2.2
1.8
1.4
1 TJ = 25ºC
0.6
0
10 20 30 40 50 60 70 80 90 100 110
I D - Amperes
© 2004 IXYS All rights reserved
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Fig. 2. Extended Output Characteristics
@ 25ºC
110
100 VGS = 10V
90
9V
80
70
60 8V
50
40 7V
30
20
10 6V
5V
0
0 3 6 9 12 15 18 21 24 27
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
2.8
2.6
2.4 VGS = 10V
2.2
2
1.8 ID = 42A
1.6
1.4 ID = 21A
1.2
1
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125
TJ - Degrees Centigrade
150
45
40
35
30
25
20
15
10
5
0
-50
Fig. 6. Drain Current vs. Case
Tem perature
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXTP42N25P

Polar N-channel MOSFETs

IXYS Corporation
IXYS Corporation


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