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H45TBXX PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H45TBXX
部品説明 PHASE CONTROL THYRISTOR
メーカ Hind Rectifiers
ロゴ Hind Rectifiers ロゴ 

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H45TBXX Datasheet, H45TBXX PDF,ピン配置, 機能
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PHASE CONTROL THYRISTOR H45TBXX
Symbol
Characteristics
Conditions
BLOCKING PARAMETERS
VRRM
VDRM
IRRM
IDRM
dV/dT
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
Repetitive peak reverse current
Repetitive peak off-state current
Rep. rate of change of voltage
CONDUCTING PARAMETERS
V = VRRM
V = VRRM
@ 67%VDRM
IF(AV)
IRMS
ITSM
I2t
VT
V0
R0
di/dt
Average on-state current
RMS on-state current
Surge on-state current
I2t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
Repetitive rate of rise of current
180 sine, 50H Z, TC
= 850C
Sine wave, 10mS
without reverse
voltage
On-state
current = 150A
dIG/dT = 1A/µS
VGK = 1V
TRIGGERING PARAMETERS
IGT
VGT
IL
IH
PG –PEAK
di/dt
VFGM
IFGM
Gate trigger current
Gate trigger voltage
Latching Current
Holding Current
Maximum Peak Gate Power
Repetitive rate of rise of current
Maximum forward gate voltage
Maximum forward gate current
VD = 5V
VD = 5V
VD = 5V
Pulse width
100μSec
THERMAL & MECHANICAL PARAMETERS
R TH (J-C)
RTH (C-HK)
TJ
TSTG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to heatsink
TJ
(0C)
125
125
125
125
125
125
125
125
125
125
25
25
25
25
HIND RECTIFIERS LTD
Value Unit
200-1600
200-1600
10
10
600
V
V
mA
mA
V/μS
45
70
800
3200
1.72
0.95
4.50
120
A
A
A
A2S
V
V
mΩ
A/μS
150
2.50
400
300
30
120
12
10
mA
V
mA
mA
W
A/μS
V
A
0.60
0.20
125
-40 - 125
4
45
0C/W
0C/W
0C
0C
NM
gms
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