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IRHM93150 の電気的特性と機能

IRHM93150のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET THRU-HOLE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHM93150
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHM93150 Datasheet, IRHM93150 PDF,ピン配置, 機能
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PD - 90889D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHM9150 100K Rads (Si) 0.080
IRHM93150 300K Rads (Si) 0.080
IRHM9150
JANSR2N7422
100V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD HardHEXFET® TECHNOLOGY
ID
-22A
-22A
QPL Part Number
JANSR2N7422
JANSF2N7422
International Rectifier’s RADHard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
-22
-14 A
-88
150 W
1.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
±20
500
-22
15
-23
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
oC
Weight
9.3 (typical)
g
For footnotes refer to the last page
www.irf.com
1
2/18/03

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IRHM93150 pdf, ピン配列
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PRraed-IirartaiodniaCtiohanracteristics
IRHM9150
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100KRads(Si)1
Min Max
300K Rads (Si)2 Units
Min Max
Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254)
Diode Forward Voltage
-100
-2.0
-4.0
-100
100
-25
0.080
-100
-2.0
-5.0
-100
100
-25
0.080
V
nA
µA
0.080 —
0.080
-3.0 — -3.0 V
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS=-80V, VGS =0V
VGS = -12V, ID =-14A
VGS = -12V, ID =-14A
VGS = 0V, IS = -22A
1. Part number IRHM9150 (JANSR2N7422)
2. Part number IRHM93150 (JANSF2N7422)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
MeV/(mg/cm²)) (MeV) (µm)
VDS(V)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
28
285 43
-100
-100
-100
-70
-60
Br
36.8
305 39
-100
-100
-70
-50
-40
I
59.9
345 32.8
-60
-120
-100
-80
-60
-40
-20
0
0
Cu
Br
I
5 10 15 20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


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IRHM93150 電子部品, 半導体
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IRHM9150
Pre-Irradiation
24
20
16
12
8
4
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig9. MaximumDrainCurrentVs.
CaseTemperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig10a. SwitchingTimeTestCircuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig10b. SwitchingTimeWaveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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部品番号部品説明メーカ
IRHM93150

RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier
International Rectifier


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