|
|
Número de pieza | IRHM93130 | |
Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRHM93130 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! www.DataSheet4U.com
PD - 90888C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM9130
100V, P-CHANNEL
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM9130 100K Rads (Si)
IRHM93130 300K Rads (Si)
RDS(on)
0.3Ω
0.3Ω
ID
-11A
-11A
International Rectifier’s RAD-Hard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-11
-7.0 A
-44
75 W
0.6 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy ➁
190
mJ
IAR Avalanche Current ➀
-11 A
EAR
Repetitive Avalanche Energy ➀
7.5 mJ
dv/dt
Peak Diode Recovery dv/dt ➂
-10 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
oC
Weight
9.3 (typical)
g
For footnotes refer to the last page
www.irf.com
1
02/18/03
1 page www.DataSheet4U.com
Pre-Irradiation
IRHM9130
2000
1600
1200
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
400
0
1
Coss
Crss
10
-VDS, Drain-to-Source Voltage (V)
100
Fig5. TypicalCapacitanceVs.
Drain-to-SourceVoltage
20 ID = -11A
16
VDS
VDS
VDS
=-80V
=-50V
=-20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig6. TypicalGateChargeVs.
Gate-to-SourceVoltage
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.0
VGS = 0 V
1.0 2.0 3.0 4.0
-VSD ,Source-to-Drain Voltage (V)
5.0
Fig7. TypicalSource-DrainDiode
ForwardVoltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
10
TC = 25 °C
TJ = 150 °C
Single Pulse
1
1 10
1ms
10ms
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig8. MaximumSafeOperatingArea
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRHM93130.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHM93130 | RADIATION HARDENED POWER MOSFET THRU-HOLE | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |