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MAR5104のメーカーはZarlink Semiconductorです、この部品の機能は「RADIATION HARD 4096 x 1 BIT STATIC RAM」です。 |
部品番号 | MAR5104 |
| |
部品説明 | RADIATION HARD 4096 x 1 BIT STATIC RAM | ||
メーカ | Zarlink Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMAR5104ダウンロード(pdfファイル)リンクがあります。 Total 12 pages
www.DataSheet4U.com
This product is obsolete.
This information is available for your
convenience only.
For more information on
Zarlink’s obsolete products and
replacement product lists, please visit
http://products.zarlink.com/obsolete_products/
1 Page MA5104
www.DataSheet4U.com
CHARACTERISTICS AND RATINGS
Symbol
VCC
VI
TA
TS
Parameter
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
Min.
-0.5
-0.3
-55
-65
Max.
7
VDD+0.3
125
150
Units
V
V
°C
°C
Figure 3: Absolute Maximum Ratings
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at TA = -55°C to +125°C with VDD = 5V ±10% and to post 100k Rad(Si) total dose
radiation at TA = 25°C with VDD = 5V ±10% (characteristics at higher radiation levels available on request).
2. Worst case at TA = +125°C, guaranteed but not tested at TA = -55°C.
GROUP A SUBGROUPS 1, 2, 3.
Symbol Parameter
Conditions
Min.
Typ.
Max. Units
VDD Supply voltage
-
4.5 5.0 5.5 V
VlH Input High Voltage
-
VDD/2
-
VDD V
VlL Input Low Voltage
-
VSS - 0.8 V
VOH Output High Voltage
IOH1 = -1mA
2.4 -
-V
VOL Output Low Voltage
IOL = 2mA
- - 0.4 V
ILI Input Leakage Current (note 2) All inputs except CS
- - ±10 µA
ILO Output Leakage Current (note 2) Output disabled, VOUT = VSS or VDD
-
- ±20 µA
IPUI Input Pull-Up Current
VIN = VSS on CS input only
- - -100 µA
IPDI Input Leakage Current
VIN = VSS on CS input only
- - 5 µA
IDD Power Supply Current
fRC = 1MHz, CS = 50% mark:space
-
12 16 mA
ISB1 Selected Supply Current
CS = VSS
- 25 35 mA
ISB2 Standby Supply Current
Chip disabled
- 50 3000 µA
Figure 4: Electrical Characteristics
Symbol Parameter
VDR VCC for Data Retention
IDDR Data Retention Current
Conditions
Min.
CS = VDR
CS = VDR, VDR = 2.0V
2.0
-
Figure 5: Data Retention Characteristics
Typ.
-
30
Max.
-
2000
Units
V
µA
2
3Pages www.DataSheet4U.com
TIMING DIAGRAMS
ADDRESS
CS
DATA OUT
TAVAVR
TAVQV
TELQV
TELQX
HIGH
IMPEDANCE
TAXQX
DATA VALID
1. WE is high for Read Cycle.
2. Address Vaild prior to or coincident with CS transition low.
Figure 11a: Read Cycle 1
TEHQZ
MA5104
ADDRESS
DATA OUT
TAVAVR
TAVQV
TAXQX
DATA VALID
1. WE is high for Read Cycle.
2. Device is continually selected. CS low.
Figure 11b: Read Cycle 2
5
6 Page | |||
ページ | 合計 : 12 ページ | ||
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PDF ダウンロード | [ MAR5104 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
MAR5104 | RADIATION HARD 4096 x 1 BIT STATIC RAM | Zarlink Semiconductor |