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FDZ1905PZ の電気的特性と機能

FDZ1905PZのメーカーはFairchild Semiconductorです、この部品の機能は「Common Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDZ1905PZ
部品説明 Common Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDZ1905PZ Datasheet, FDZ1905PZ PDF,ピン配置, 機能
www.DataSheet4U.com
July 2008
FDZ1905PZ
Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET
20V, 3A, 123m
tm
Features
„ Max rS1S2(on) = 126mat VGS = –4.5V, IS1S2 = –1A
„ Max rS1S2(on) = 141mat VGS = –2.5V, IS1S2 = –1A
„ Max rS1S2(on) = 198mat VGS = –1.8V, IS1S2 = –1A
„ Max rS1S2(on) = 303mat VGS = –1.5V, IS1S2 = –1A
„ Occupies only 1.5 mm2 of PCB area, less than 50% of the
area of 2 x 2 BGA
„ Ultra-thin package: less than 0.65 mm height when mounted
to PCB
„ High power and current handling capability
„ HBM ESD protection level > 4kV (Note 3)
„ RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features two common drain
P-channel MOSFETs, which enables bidirectional current flow,
on Fairchild’s advanced 1.5V PowerTrench® process with state
of the art “low pitch” WL-CSP packaging process, the
FDZ1905PZ minimizes both PCB space and rS1S2(on). This
advanced WL-CSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rS1S2(on) .
Applications
„ Battery management
„ Load switch
„ Battery protection
PIN1
S1
S1 G1
G2 S2
S2
S1
G1
G2
BOTTOM
TOP
S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
VGS
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Voltage
Gate to Source Voltage
Source1 to Source2 Current -Continuous TA = 25°C
-Pulsed
Power Dissipation (Steady State)
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±8
–3
–15
1.5
0.9
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
83
140
°C/W
Device Marking
5
Device
FDZ1905PZ
Package
WL-CSP 1.0X1.5
Reel Size
7’’
Tape Width
8mm
Quantity
5000 units
©2008 Fairchild Semiconductor Corporation
FDZ1905PZ Rev.B
1
www.fairchildsemi.com

1 Page





FDZ1905PZ pdf, ピン配列
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Typical Characteristics TJ = 25°C unless otherwise noted
15
12
9
6
3
0
0
VG2S2 = -4.5V
VG2S2 = -3.0V
VG2S2 = -2.5V
VG2S2 = -1.8V
VG2S2 = -1.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VG1S1 = -4.5V
12
-VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 1. On Region Characteristics
3
15
VGS = -4.5V
VGS = -3.0V
12 VGS = -2.5V
9
VGS = -1.8V
6
VGS = -1.5V
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
01234
-VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 2. On Region Characteristics
5
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.5 VG1S1 = -4.5V
2.0
VG2S2 = -1.5V
1.5
VG2S2 = -1.8V
VG2S2 = -2.5V
1.0
0.5
0
VG2S2 = -3.0V
VG2S2 = -4.5V
3 6 9 12
-IS1S2, SOURCE1 TO SOURCE2 CURRENT(A)
15
Figure 3. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
IS1S2 = -1A
VGS = -4.5V
1.4
1.2
1.0
2.5
VGS = -1.5V
2.0
VGS = -2.5V
1.5 VGS = -1.8V
1.0
0.5
0
VGS = -3.0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -4.5V
3 6 9 12
-IS1S2, SOURCE1 TO SOURCE2 CURRENT(A)
15
Figure4. Normalized On-Resistance
vs Drain Current and Gate Voltage
500
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
400
IS1S2 = -1A
300
TJ = 125oC
200
0.8
0.6
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 5. Normalized On Resistance
vs Junction Temperature
100
TJ = 25oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. On-Resistance vs Gate to
Source Voltage
4.5
FDZ1905PZ Rev.B
3 www.fairchildsemi.com


3Pages


FDZ1905PZ 電子部品, 半導体
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TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
FPS™
FRFET®
Global Power ResourceSM
PDP-SPM™
Power220®
POWEREDGE®
SupreMOS™
SyncFET™
®
CROSSVOLT
CTL™
Green FPS™
Green FPS™ e-Series™
Power-SPM™
PowerTrench®
The Power Franchise®
Current Transfer Logic™
EcoSPARK®
EZSWITCH™ *
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
GTO™
i-Lo
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury to the user.
2. A critical component in any component of a life support, device
or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I33
FDZ1905PZ Rev.B
6 www.fairchildsemi.com

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部品番号部品説明メーカ
FDZ1905PZ

Common Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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