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EIC7785-8 の電気的特性と機能

EIC7785-8のメーカーはExcelics Semiconductorです、この部品の機能は「Internally Matched Power FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 EIC7785-8
部品説明 Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 




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EIC7785-8 Datasheet, EIC7785-8 PDF,ピン配置, 機能
www.DataSheet4U.com
UPDATED 08/21/2007
EIC7785-8
7.70-8.50GHz 8-Watt Internally-Matched Power FET
FEATURES
7.70–8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
34% Power Added Efficiency
-46 dBc IM3 at PO = 28.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 7.70-8.50GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 7.70-8.50GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 7.70-8.50GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 8.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN TYP MAX UNITS
38.5 39.5
dBm
7.5 8.5
dB
±0.6
dB
34
2200
2600
%
mA
-43 -46
dBc
4000
-2.5
3.5
4500
-4.0
4.0
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
96mA
Igr Reverse Gate Current -19.2mA
Pin Input Power
39dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
37.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175C
-65C to +175C
37.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007

1 Page





EIC7785-8 pdf, ピン配列
www.DataSheet4U.com
UPDATED 08/21/2007
EIC7785-8
7.70-8.50GHz 8-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
40
THIRD-ORDER
INTERCEPT POINT IP3
35
30 Potentially Unsafe
Operating Region
25
20
15 Safe Operating
Region
10
5
f1 or f2
IP3 = Pout + IM3/2
Pout
IM3
Pin
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 2200 mA)
P-1dB & G-1dB vs Frequency
41 12
40 11
39 10
38 9
37
36
7.6
8
P-1dB (dBm)
G-1dB (dB)
7
7.8 8.0 8.2 8.4 8.6
Frequency (GHz)
Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS)
IM3 vs Output Power
f1 = 8.50 GHz, f2 = 8.51 GHz
-20
-25
-30
-35
-40
-45
-50
-55 IM3 (dBc)
-60
23 24 25 26 27 28 29 30 31 32 33 34
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007


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Link :


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