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EIC7785-5 の電気的特性と機能

EIC7785-5のメーカーはExcelics Semiconductorです、この部品の機能は「Internally Matched Power FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 EIC7785-5
部品説明 Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 




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EIC7785-5 Datasheet, EIC7785-5 PDF,ピン配置, 機能
www.DataSheet4U.com
UPDATED 08/21/2007
EIC7785-5
7.70-8.50GHz 5-Watt Internally-Matched Power FET
FEATURES
7.70–8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
34% Power Added Efficiency
-49 dBc IM3 at PO = 26.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
Id1dB
IM3
IDSS
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 1600mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 1600mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 1600mA
f = 7.70-8.50GHz
Drain Current at 1dB Compression
f = 7.70-8.50GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 8.50GHz
Opt-01
Opt-02
Saturated Drain Current VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 30 mA
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
36.5
7.5
-42
-46
TYP
37.5
8.5
34
1600
-45
-49
2900
-2.5
5.0
MAX
±0.6
1900
UNITS
dBm
dB
dB
%
mA
dBc
3500
-4.0
5.5
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf
Forward Gate Current
68mA
Igr
Reverse Gate Current
-13.6mA
Pin
Input Power
37dBm
Tch Channel Temperature 175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation 27W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
20.4mA
-3.4mA
@ 3dB Compression
175C
-65C to +175C
27W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007

1 Page





EIC7785-5 pdf, ピン配列
www.DataSheet4U.com
UPDATED 08/21/2007
EIC7785-5
7.70-8.50GHz 5-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
30
THIRD-ORDER
INTERCEPT POINT IP3
25
Potentially Unsafe
20 Operating Region
15
Safe Operating
10 Region
5
f1 or f2
IP3 = Pout + IM3/2
Pout
IM3
Pin
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 1600 mA)
P-1dB & G-1dB vs Frequency
39 11
38 10
37 9
36 8
35
34
7.6
7
P-1dB (dBm)
G-1dB (dB)
6
7.8 8.0 8.2 8.4 8.6
Frequency (GHz)
Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS)
IM3 vs Output Power
f1 = 8.50 GHz, f2 = 8.51 GHz
-15
-20
-25
-30
-35
-40
-45
-50
-55 IM3 (dBc)
-60
21 22 23 24 25 26 27 28 29 30 31 32 33
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007


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