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PDF EIC5964-5 Data sheet ( Hoja de datos )
| Número de pieza | EIC5964-5 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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EIC5964-5
5.90-6.40 GHz 5-Watt Internally-Matched Power FET
FEATURES
• 5.90 – 6.40 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +37.5 dBm Output Power at 1dB Compression
• 10.0 dB Power Gain at 1dB Compression
• 37% Power Added Efficiency
• -46 dBc IM3 at Po = 26.5 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
DESCRIPTION
The EIC5964-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 5.90-6.40GHz
VDS = 10 V, IDSQ ≈ 1600mA
Gain at 1dB Compression
f = 5.90-6.40GHz
VDS = 10 V, IDSQ ≈ 1600mA
Gain Flatness
f = 5.90-6.40GHz
VDS = 10 V, IDSQ ≈ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1600mA
f = 5.90-6.40GHz
Id1dB
Drain Current at 1dB Compression f = 5.90-6.40GHz
Output 3rd Order Intermodulation Distortion
IM3 ∆f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 6.40 GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 30 mA
RTH Thermal Resistance3
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
36.5
9
-43
TYP
37.5
10
37
1600
-46
2900
-2.5
5.0
MAX
UNITS
dBm
dB
±0.6 dB
1900
%
mA
dBc
3500
-4.0
5.5
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2003
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EIC5964-5.PDF ] | |
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