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EIC4450-8 の電気的特性と機能

EIC4450-8のメーカーはExcelics Semiconductorです、この部品の機能は「Internally Matched Power FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 EIC4450-8
部品説明 Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 




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EIC4450-8 Datasheet, EIC4450-8 PDF,ピン配置, 機能
www.DataSheet4U.com
UPDATED 08/21/2007
EIC4450-8
4.40-5.00GHz 8-Watt Internally Matched Power FET
FEATURES
4.40–5.00GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
10.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at PO = 28.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Id1dB
IM3
IDSS
Output Power at 1dB Compression f = 4.4-5.0GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 4.4-5.0GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 4.4-5.0GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 4.4-5.0GHz
Drain Current at 1dB Compression f = 4.4-5.0GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f =5.0GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 40 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
38.5
9.5
-43
TYP
39.5
10.5
35
2300
-46
4000
-2.5
3.5
MAX
±0.6
2600
5000
-4.0
4.0
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
15V
10V
Vgs Gate-Source Voltage
-5V
-4V
Igf Forward Gate Current
96mA
28.8mA
Igr Reverse Gate Current -19.2mA
-4.8mA
Pin Input Power
39dBm
@ 3dB Compression
Tch Channel Temperature
175C
175C
Tstg
Storage Temperature
-65C to +175C
-65C to +175C
Pt Total Power Dissipation
37.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
37.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007

1 Page





EIC4450-8 pdf, ピン配列
www.DataSheet4U.com
UPDATED 08/21/2007
EIC4450-8
4.40-5.00GHz 8-Watt Internally Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
40
THIRD-ORDER
INTERCEPT POINT IP3
35
30 Potentially Unsafe
Operating Region
25
20
15 Safe Operating
Region
10
5
f1 or f2
IP3 = Pout + IM3/2
Pout
IM3
Pin
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 2200 mA)
P-1dB & G-1dB vs Frequency
41 14
40 13
39 12
38 11
37 10
P-1dB (dBm)
G-1dB (dB)
36 9
4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1
Frequency (GHz)
Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS)
IM3 vs Output Power
f1 = 5.00 GHz, f2 = 5.01 GHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55 IM3 (dBc)
-60
23 24 25 26 27 28 29 30 31 32 33 34
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007


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