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EIC1415-4のメーカーはExcelics Semiconductorです、この部品の機能は「Internally Matched Power FET」です。 |
部品番号 | EIC1415-4 |
| |
部品説明 | Internally Matched Power FET | ||
メーカ | Excelics Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとEIC1415-4ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
www.DataSheet4U.com
EIC1415-4
14.40-15.35 GHz 4-Watt Internally-Matched Power FET
FEATURES
• 14.40-15.35 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +36.0 dBm Output Power at 1dB Compression
• 5.0 dB Power Gain at 1dB Compression
• 25% Power Added Efficiency
• -43 dBc IM3 at Po = 25.0 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
DESCRIPTION
The EIC1415-4 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain at 1dB Compression
f = 14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain Flatness
f = 14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
f = 14.40-15.35GHz
Id1dB
Drain Current at 1dB Compression f = 14.40-15.35GHz
Output 3rd Order Intermodulation Distortion
IM3 ∆f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 15.35 GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 20 mA
RTH Thermal Resistance3
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
35.5
4.5
-40
TYP
36.0
5.0
25
1100
-43
2080
-2.5
5.5
MAX
UNITS
dBm
dB
±0.6 dB
1300
%
mA
dBc
2880
-4.0
6.0
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised December 2003
1 Page www.DataSheet4U.com
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
30
25
Potentially Unsafe
20 Operating Region
15
Safe Operating
10 Region
5
0
0 25 50 75 100 125 150
Case Temperature (°C)
EIC1415-4
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
IP3 = Pout + IM3/2
Pout
IM3
Pin
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 1100 mA)
P-1dB & G-1dB vs Frequency
37
8
36 7
35 6
34 5
33
32
14.4
4
P-1dB (dBm)
G-1dB (dB)
3
14.6 14.8 15.0 15.2 15.4
Frequency (GHz)
Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS)
IM3 vs Output Power
f1 = 15.30 GHz, f2 = 15.31 GHz
-15
-20
-25
-30
-35
-40
-45
-50 IM3 (dBc)
-55
19 20 21 22 23 24 25 26 27 28 29 30 31 32
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised December 2003
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ EIC1415-4 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
EIC1415-2 | Internally Matched Power FET | Excelics Semiconductor |
EIC1415-3 | Internally Matched Power FET | Excelics Semiconductor |
EIC1415-4 | Internally Matched Power FET | Excelics Semiconductor |