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EIC1112-8 の電気的特性と機能

EIC1112-8のメーカーはExcelics Semiconductorです、この部品の機能は「Internally Matched Power FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 EIC1112-8
部品説明 Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 




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EIC1112-8 Datasheet, EIC1112-8 PDF,ピン配置, 機能
www.DataSheet4U.com
ISSUED 07/03/2007
EIC1112-8
11.7-12.7 GHz 8-Watt Internally Matched Power FET
FEATURES
11.7– 12.7GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
6.0dB Power Gain at 1dB Compression
30% Power Added Efficiency
Hermetic Metal Flange Package
0.060 MIN
0.650±0.008 0.512
GATE
Excelics
EIC1112-8
YYWW
0.060 MIN
DRAIN
0.022
0.319
0.130
0.045
0.382
2X 0.094
0.004
0.071±0.008
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP MAX
P1dB
G1dB
G
PAE
Id1dB
IM3
IDSS
Output Power at 1dB Compression
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 11.7-12.7GHz
f = 11.7-12.7GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 11.7-12.7GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 11.7-12.7GHz
Drain Current at 1dB Compression
f = 11.7-12.7GHz
Output 3rd Order Intermodulation Distortion
f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L
Vds = 10 V, IDSQ 65% IDSS
f = 12.7GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
38.5 39.5
56
±0.6
30
2300
2800
-40 -43
4000
5000
VP Pinch-off Voltage
RTH Thermal Resistance3
Note: 1) Tested with 100 Ohm gate resistor.
VDS = 3 V, IDS = 40 mA
-2.5 -4.0
3..5 4
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf
Forward Gate Current
Igsr
Reserve Gate Current
Pin Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
15
-5
86.4mA
-14.4mA
38.5dBm
175 oC
-65 to +175 oC
38W
CONTINUOUS2
10V
-4.5V
28.8mA
-4.8mA
@ 3dB Compression
175 oC
-65 to +175 oC
38W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007

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共有リンク

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部品番号部品説明メーカ
EIC1112-5

Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor
EIC1112-8

Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor


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