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PDF EIC1010A-8 Data sheet ( Hoja de datos )
| Número de pieza | EIC1010A-8 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
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www.DataSheet4U.com
UPDATED 07/20/2005
EIC1010A-8
10.00-10.25 GHz 8-Watt Internally Matched Power FET
FEATURES
• 10.00– 10.25GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +39.0 dBm Output Power at 1dB Compression
• 7.0 dB Power Gain at 1dB Compression
• 31% Power Added Efficiency
• -46 dBc IM3 at Po = 28 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 10.00-10.25GHz
VDS = 9 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 10.00-10.25GHz
VDS = 9 V, IDSQ ≈ 2200mA
Gain Flatness
f = 10.00-10.25GHz
VDS = 9 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 9 V, IDSQ ≈ 2200mA
f = 10.00-10.25GHz
38.0 39.0
6.5 7.5
31
Id1dB
IM3
Drain Current at 1dB Compression
f = 10.00-10.25GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 28 dBm S.C.L2
VDS = 9 V, IDSQ ≈ 65% IDSS
f = 10.25 GHz
2300
-43 -46
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
4000
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
RTH Thermal Resistance3
-2.5
3.5
Note: 1.) Tested with 100 Ohm gate resistor.
2.) S.C.L. = Single Carrier Level. 3.) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
MAX
±0.5
2600
5000
-4.0
4.0
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
80 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
38 W
TCH Channel Temperature
175°C
TSTG
Storage Temperature
-65/+175°C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2005
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EIC1010A-8.PDF ] | |
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