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EIC1010-8 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 EIC1010-8
部品説明 Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 



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EIC1010-8 Datasheet, EIC1010-8 PDF,ピン配置, 機能
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UPDATED 02/15/2005
EIC1010-8
10.00-10.70 GHz 8-Watt Internally Matched Power FET
FEATURES
10.00– 10.70GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
31% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
Excelics
EIC1010-8
YM
SN
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 10.00-10.70GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 10.00-10.70GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 10.00-10.70GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 10.00-10.70GHz
38.5
6.0
39.5
7.0
31
Id1dB Drain Current at 1dB Compression f = 10.00-10.70GHz
2300
Output 3rd Order Intermodulation Distortion
IM3 f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 10.70 GHz
-43 -46
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
4000
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 40 mA
-2.5
3.5
1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
MAX
±0.6
2600
5000
-4.0
4.0
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
80 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
38 W
TCH Channel Temperature
175°C
TSTG
Storage Temperature
-65/+175°C
Notes:
1.
2.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised February 2005

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