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EIC0910-8 の電気的特性と機能

EIC0910-8のメーカーはExcelics Semiconductorです、この部品の機能は「Internally Matched Power FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 EIC0910-8
部品説明 Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 




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EIC0910-8 Datasheet, EIC0910-8 PDF,ピン配置, 機能
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-8
9.50-10.50GHz 8-Watt Internally Matched Power FET
FEATURES
9.50–10.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-43 dBc IM3 at PO = 28.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Id1dB
IM3
IDSS
Output Power at 1dB Compression f = 9.5-10.5GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 9.5-10.5GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 9.5-10.5GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 9.5-10.5GHz
Drain Current at 1dB Compression f = 9.5-10.5GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f =10.5GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 40 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
38.5
6.5
-40
TYP
39.5
7.5
30
2200
-43
3700
-2.5
2.5
MAX
±0.6
2600
4300
-4.0
3.5
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
15V
10V
Vgs Gate-Source Voltage
-5V
-4V
Igf Forward Gate Current
96mA
28.8mA
Igr Reverse Gate Current -19.2mA
-4.8mA
Pin Input Power
39dBm
@ 3dB Compression
Tch Channel Temperature
175C
175C
Tstg
Storage Temperature
-65C to +175C
-65C to +175C
Pt Total Power Dissipation
43W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
43W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007

1 Page





EIC0910-8 pdf, ピン配列
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-8
9.50-10.50GHz 8-Watt Internally Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
45
40
THIRD-ORDER
INTERCEPT POINT IP3
35
Potentially Unsafe
30 Operating Region
f1 or f2
IP3 = Pout + IM3/2
25
20
Safe Operating
15 Region
10
5
Pout
IM3
Pin
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 2200 mA)
P-1dB & G-1dB vs Frequency
40 12
39 11
38
P-1dB (dBm)
G-1dB (dB)
10
37 9
36 8
35 7
9.4 9.6 9.8 10.0 10.2 10.4 10.6
Frequency (GHz)
Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS)
IM3 vs Output Power
f1 = 10.00 GHz, f2 = 10.01 GHz
-15
-20
-25
-30
-35
-40
-45
-50 IM3 (dBc)
-55
-60
23 24 25 26 27 28 29 30 31 32 33 34 35
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007


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