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EIC0910-12 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 EIC0910-12
部品説明 9.50-10.50 GHz 12-Watt Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 



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EIC0910-12 Datasheet, EIC0910-12 PDF,ピン配置, 機能
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UPDATED 03/07/2008
EIC0910-12
9.50-10.50 GHz 12-Watt Internally Matched Power FET
FEATURES
9.50–10.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 28.5 dBm SCL
100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EIC0910-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 3200Ma
Gain at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 3200mA
Gain Flatness
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3200mA
f = 9.50-10.50GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 9.50-10.50GHz
Output 3rd Order Intermodulation Distortion
f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L
Vds = 10 V, IDSQ 65% IDSS
f = 10.50GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
Caution! ESD sensitive device.
MIN
39.5
6.0
TYP
40.5
7.0
30
3300
MAX
±0.6
4200
UNITS
dBm
dB
dB
%
mA
-43 -46
dBc
6500
9000
mA
VP Pinch-off Voltage
VDS = 3 V, IDS = 58 mA
RTH Thermal Resistance3
Note: 1. Tested with 50 Ohm gate resistor. 2. S.C.L. = Single Carrier Level.
-2.5 -4.0
V
2.3 2.6 oC/W
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
15
Vgs
Gate-Source Voltage
-5
Igsf Forward Gate Current 130mA
Igsr
Reverse Gate Current
-21mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
40.0dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation 57W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
43mA
-7mA
@ 3dB Compression
175 oC
-65 to +175 oC
57W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised March 2008

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部品番号部品説明メーカ
EIC0910-12

9.50-10.50 GHz 12-Watt Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor

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