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PDF 2SK2390 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2390 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2390 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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2SK2390
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC-DC converter
• Avalanche ratings
Outline
TO-220CFM
November 1996
D 12 3
1. Gate
G 2. Drain
3. Source
S
1 page  
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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
I D = 15 A
1.2
10 A
0.8
5A
0.4
0 2 4 6 8 10
Gate to Source Voltage V GS (V)
2SK2390
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = 4 V
10 V
0.02
0.01
1
2 5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
I D = 15 A
0.3
V GS = 4 V
0.2
10 A
5A
0.1
5 A, 10 A, 15 A
10 V
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25 °C
5
75 °C
25 °C
2
1
0.5
0.2
0.2
V DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I D (A)
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 2SK2390.PDF ] | |
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