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STP12N65M5 の電気的特性と機能

STP12N65M5のメーカーはST Microelectronicsです、この部品の機能は「Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP12N65M5
部品説明 Power MOSFETs
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP12N65M5 Datasheet, STP12N65M5 PDF,ピン配置, 機能
www.DataSheet4U.com
STD12N65M5, STF12N65M5
STP12N65M5, STU12N65M5
N-channel 650 V, 0.370 , 8.5 A MDmesh™ V Power MOSFET
DPAK, TO-220FP, TO-220, IPAK
Preliminary Data
Features
Type
STD12N65M5
STF12N65M5
STP12N65M5
STU12N65M5
VDSS @ RDS(on)
TJmax
max
ID
PW
710 V
8.5 A
8.5 A(1)
< 0.41
8.5 A
70 W
25 W
70 W
8.5 A 70 W
1. Limited only by maximum temperature allowed
Worldwide best RDS(on) * area
Higher VDSS rating
High dv/dt capability
Excellent switching performance
Easy to drive
100% Avalanche tested
Application
Switching applications
Description
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company’s PowerMESH™ horizontal layout. The
resulting product has an extremely low on-
resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1. Device summary
Order codes
Marking
STD12N65M5
STF12N65M5
STP12N65M5
STU12N65M5
12N65M5
12N65M5
12N65M5
12N65M5
IPAK
3
2
1
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
February 2009
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/14
www.st.com
14

1 Page





STP12N65M5 pdf, ピン配列
www.DataSShTeext14U2N.co6m5M5
1 Electrical ratings (a)
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220, IPAK,
DPAK
TO-220FP
Unit
VDS
VGS
ID
ID
IDM (2)
PTOT
IAR
EAS
dv/dt (3)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
650
25
8.5
5.4
34
70
TBD
8.5 (1)
5.4 (1)
34 (1)
25
TBD
15
V
V
A
A
A
W
A
mJ
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
Tstg Storage temperature
Tj Max. operating junction temperature
- 55 to 150
150
°C
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 8.5 A, di/dt 400 A/µs; VPeak < V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK IPAK TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb Thermal resistance junction-pcb max
Tl
Maximum lead temperature for soldering
purpose
1.79
100
50
5
62.5
300
°C/W
°C/W
°C
a. All data which refers solely to the TO-220FP package is preliminary
3/14


3Pages


STP12N65M5 電子部品, 半導体
www.DataSTheesett4cUi.rccomuits
3 Test circuits
STx12N65M5
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
VDD
VGS
PW
VD
RG
RL
2200
µF
D.U.T.
3.3
µF VDD
12V 47k
1k
100nF
Vi=20V=VGMAX
2200
µF
IG=CONST
2.7k
100
D.U.T.
VG
47k
AM01468v1
PW
1k
AM01469v1
Figure 4. Test circuit for inductive load
Figure 5. Unclamped inductive load test
switching and diode recovery times
circuit
G
25
A
D
D.U.T.
S
B
AA
FAST
DIODE
B
B
G
RG
L=100µH
D
S
3.3
µF
1000
µF
VDD
Vi
L
VD
2200
3.3
µF µF VDD
ID
D.U.T.
Figure 6.
AM01470v1
Pw
Unclamped inductive waveform Figure 7.
Switching time waveform
AM01471v1
V(BR)DSS
VD
ton
tdon
tr
toff
tdoff
tf
VDD
IDM
ID
VDD
0
90%
10% VDS
90%
VGS
90%
10%
AM01472v1 0 10%
AM01473v1
6/14

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部品番号部品説明メーカ
STP12N65M5

Power MOSFETs

ST Microelectronics
ST Microelectronics


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