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IR2111S の電気的特性と機能

IR2111SのメーカーはInternational Rectifierです、この部品の機能は「HALF-BRIDGE DRIVER」です。


製品の詳細 ( Datasheet PDF )

部品番号 IR2111S
部品説明 HALF-BRIDGE DRIVER
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IR2111S Datasheet, IR2111S PDF,ピン配置, 機能
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Data Sheet No. PD60028-M
IR2111(S) & (PbF)
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set deadtime
High side output in phase with input
Also available LEAD-FREE
HALF-BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
200 mA / 420 mA
VOUT
10 - 20V
ton/off (typ.)
750 & 150 ns
Deadtime (typ.)
650 ns
Description
Packages
The IR2111(S) is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for half-
bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with
standard CMOS outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Internal deadtime is provided
8-Lead PDIP
to avoid shoot-through in the output half-bridge. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
8-Lead SOIC
Typical Connection
up to 600V
VCC
VCC
VB
IN IN HO
COM
LO
VS
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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IR2111S pdf, ピン配列
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IR2111(S) & (PbF)
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in figure 3.
Symbol
ton
toff
tr
tf
DT
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Deadtime, LS turn-off to HS turn-on &
HS turn-off to LS turn-on
Delay matching, HS & LS turn-on/off
Min.
550
480
Typ. Max. Units Test Conditions
750 950
150 180
VS = 0V
VS = 600V
80 130
40 65
ns
650 820
— 30 —
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
VIH
VIL
VOH
VOL
ILK
IQBS
IQCC
IIN+
IIN-
VBSUV+
VBSUV-
VCCUV+
VCCUV-
IO+
IO-
Definition
Logic “1” input voltage for HO & logic “0” for LO
Logic “0” input voltage for HO & logic “1” for LO
High level output voltage, VBIAS - VO
Low level output voltage, VO
Offset supply leakage current
Quiescent VBS supply current
Quiescent VCC supply current
Logic “1” input bias current
Logic “0” input bias current
VBS supply undervoltage positive going threshold
VBS supply undervoltage negative going threshold
VCC supply undervoltage positive going threshold
VCC supply undervoltage negative going threshold
Output high short circuit pulsed current
Output low short circuit pulsed current
Min.
6.4
9.5
12.6
7.6
7.2
7.6
7.2
200
420
Typ. Max. Units Test Conditions
——
——
——
— 3.8 V
— 6.0
— 8.3
— 100
— 100 mV
— 50
50 100
70 180 µA
30 50
— 1.0
8.6 9.6
VCC = 10V
VCC = 15V
VCC = 20V
VCC = 10V
VCC = 15V
VCC = 20V
IO = 0A
IO = 0A
VB = VS = 600V
VIN = 0V or VCC
VIN = 0V or VCC
VIN = VCC
VIN = 0V
8.2 9.2
8.6 9.6
V
8.2 9.2
250 —
500 —
VO = 0V, VIN = VCC
PW 10 µs
mA
VO = 15V, VIN = 0V
PW 10 µs
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IR2111S 電子部品, 半導体
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IR2111(S) & (PbF)
1500
1250
1000
750
500
M ax.
T yp.
M in.
250
0
-50 -25
0
25 50 75 100 125
Temperature (oC)
Figure 11A Turn-On Time vs Temperature
400
350
300
250
200
150
100
50
0
-50
-25
Max
Typ
0 25 50 75
Temperature (°C)
100 125
Figure 12A Turn-Off Time vs Temperature
400
350
300
250
200
Max
150
100
Typ
50
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 13A Turn-On RiseTime vs Temperature
6
1500
1250
1000
750
500
Max.
Typ.
Min.
250
0
10 12 14 16 18
V BIA S Supply V oltage (V)
Figure 11B Turn-On Time vs Voltage
400
350
300
250
Max
200
150
Typ
100
50
0
10 12 14 16 18
20
20
VBIAS Supply Voltage (V)
Figure 12B Turn-Off Time vs Voltage
400
350
300
250
200
Max
150
100
Typ
50
0
10
12 14 16 18
V B IA S Supply V oltage (V )
20
Figure 13B Turn-On RiseTime vs Voltage
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共有リンク

Link :


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