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IRHLG7670Z4 の電気的特性と機能

IRHLG7670Z4のメーカーはInternational Rectifierです、この部品の機能は「60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHLG7670Z4
部品説明 60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHLG7670Z4 Datasheet, IRHLG7670Z4 PDF,ピン配置, 機能
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PD-97191B
2N7635M1
IRHLG7670Z4
RADIATION HARDENED 60V, Combination 2N-2P-CHANNEL
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHLG7670Z4 100K Rads (Si)
IRHLG7630Z4 300K Rads (Si)
RDS(on)
0.6
1.25
0.6
1.25
ID
1.07A
-0.71A
1.07A
-0.71A
CHANNEL
N
P
N
P
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current
ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Pre-Irradiation
N-Channel
P-Channel Units
1.07
0.67
-0.71
-0.45
A
4.28
-2.84
1.0 1.0 W
0.01
0.01
W/°C
±10 ±10 V
13 Á
21 ²
mJ
1.07
-0.71
A
0.1 0.1 mJ
7.0 Â
-14 ³
V/ns
-55 to 150
oC
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
04/01/08

1 Page





IRHLG7670Z4 pdf, ピン配列
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Pre-Irradiation
IRHLG7670Z4, 2N7635M1
Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-60
-1.0
0.9
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Typ
-0.08
Max
Units
V
V/°C
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
— 1.25
VGS = -4.5V, ID = -0.45A Ã
3.07
10
138
39
6.7
-2.0 V
— mV/°C
VDS = VGS, ID = -250µA
—S
-1.0
-10 µA
-100
100
2.8
1.7
0.8
nA
nC
VDS = -10V, IDS = -0.45A Ã
VDS= -48V ,VGS= 0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.71A
VDS = -30V
17
20 ns
27
VDD = -30V, ID = -0.71A,
VGS = -5.0V, RG = 24
23
Measured from Drain lead (6mm /0.25in
nH from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
— pF
VGS = 0V, VDS = -25V
f = 1.0MHz
52.4 —
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) À
-0.71
-2.84
A
VSD Diode Forward Voltage
— — -5.0 V
Tj = 25°C, IS = -0.71A, VGS = 0V Ã
trr Reverse Recovery Time
— — 30 ns Tj = 25°C, IF = -0.71A, di/dt -100A/µs
QRR Reverse Recovery Charge
— — 11 nC
VDD -25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
— — 125 °C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHLG7670Z4 電子部品, 半導体
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IRHLG7670Z4, 2N7635M1
N-Channel
Q1,Q3
10 10
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
11
2.5V
Pre-Irradiation
2.5V
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
2.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10
TJ = 150°C
1
TJ = 25°C
0.1
2
VDS = 25V
2s PULSE WIDTH
2.5 3 3.5
VGS, Gate-to-Source Voltage (V)
4
Fig 3. Typical Transfer Characteristics
6
2.0
ID = 1.07A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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部品番号部品説明メーカ
IRHLG7670Z4

60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET

International Rectifier
International Rectifier


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