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STP13N95K3のメーカーはST Microelectronicsです、この部品の機能は「Power MOSFETs」です。 |
部品番号 | STP13N95K3 |
| |
部品説明 | Power MOSFETs | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTP13N95K3ダウンロード(pdfファイル)リンクがあります。 Total 12 pages
www.DataSheet4U.com
STP13N95K3, STF13N95K3
STW13N95K3
N-channel 950 V, 0.68 Ω, 10 A, TO-220, TO-220FP, TO-247
SuperMESH3™ Power MOSFET
Preliminary data
Features
Type
STP13N95K3
STF13N95K3
STW13N95K3
VDSS RDS(on) max
950 V < 0.85 Ω
950 V < 0.85 Ω
950 V < 0.85 Ω
ID
10 A
10 A
10 A
Pw
190 W
40 W
190 W
■ 100% avalanche tested
■ Extremely large avalanche performance
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Zener-protected
Application
■ Switching applications
Description
The new SuperMESH3™ series of Power
MOSFETS is the result of the fine-tuning of ST's
well-established strip-based PowerMESH™
layout with a new optimized vertical structure. The
innovative design offer significantly reduced on-
resistance, exceptional dynamic performance and
very large avalanche capability, making the device
suitable for the most demanding applications.
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order code
STF13N95K3
STP13N95K3
STW13N95K3
Marking
13N95K3
13N95K3
13N95K3
Package
TO-220FP
TO-220
TO-247
Packaging
Tube
Tube
Tube
May 2009
Doc ID 15685 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
www.st.com
12
1 Page www.DataSShTeePt41U3.Nco9m5K3, STF13N95K3, STW13N95K3
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
TO-220
Value
TO-220FP TO-247
Unit
VGS
ID
ID
IDM (2)
PTOT
IAR
EAS
dv/dt(3)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
10
6.3
40
190
30
10(1)
6.3(1)
40(1)
40
13
TBD
6
V
10 A
6.3 A
40 A
190 W
A
mJ
V/ns
VISO Insulation withstand voltage (AC)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 10 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS
2500
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 TO-220FP TO-247
Rthj-case
Rthj-amb
TJ
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
0.66 3.13
62.50
300
0.66 °C/W
50.00 °C/W
°C/W
Doc ID 15685 Rev 1
3/12
3Pages www.DataSTheesett4cUi.crcomuits
3 Test circuits
STP13N95K3, STF13N95K3, STW13N95K3
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
VDD
VGS
PW
VD
RG
RL
2200
μF
D.U.T.
3.3
μF VDD
12V 47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
μF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
AM01468v1
PW
1kΩ
AM01469v1
Figure 4. Test circuit for inductive load
Figure 5. Unclamped inductive load test
switching and diode recovery times
circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
B
B
G
RG
L=100μH
D
S
3.3
μF
1000
μF
VDD
Vi
L
VD
2200
3.3
μF μF VDD
ID
D.U.T.
AM01470v1
Pw
Figure 6. Unclamped inductive waveform
Figure 7. Switching time waveform
AM01471v1
V(BR)DSS
VD
ton
tdon
tr
toff
tdoff
tf
VDD
IDM
ID
VDD
0
90%
10% VDS
90%
VGS
90%
10%
AM01472v1 0 10%
AM01473v1
6/12 Doc ID 15685 Rev 1
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
STP13N95K3 | Power MOSFETs | ST Microelectronics |