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STP13NK50Z の電気的特性と機能

STP13NK50ZのメーカーはST Microelectronicsです、この部品の機能は「Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP13NK50Z
部品説明 Power MOSFETs
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP13NK50Z Datasheet, STP13NK50Z PDF,ピン配置, 機能
www.DataSheet4U.com
STF13NK50Z
STP13NK50Z - STW13NK50Z
N-channel 500V - 0.40- 11A TO-220/TO-220FP/TO-247
Zener-protected SuperMESHTM Power MOSFET
Features
Type
STF13NK50Z
STP13NK50Z
STW13NK50Z
VDSS
500 V
500 V
500 V
RDS(on) ID
<0.48 11 A
<0.48 11 A
<0.48 11 A
Pw
30 W
140 W
140 W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs.
Applications
Switching application
3
2
1
TO-220
3
2
1
TO-220FP
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STF13NK50Z
STP13NK50Z
STW13NK50Z
Marking
F13NK50Z
P13NK50Z
W13NK50Z
Package
TO-220FP
TO-220
TO-247
August 2007
Rev 1
Packaging
Tube
Tube
Tube
1/16
www.st.com
16

1 Page





STP13NK50Z pdf, ピン配列
www.DataSShTeeFt14U3.NcoKm50Z - STP13NK50Z - STW13NK50Z
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(2)
PTOT
dv/dt(3)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous)
at TC = 25°C
Drain current (continuous)
at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
VISO Insulation withstand voltage (DC)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 11A, di/dt 200 A/µs, VDD 80% V(BR)DSS
Value
TO-220/TO-247
TO-220FP
500
± 30
11 11(1)
6.93
44
140
1.12
4.5
--
6.93(1)
44(1)
30
0.24
2500
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient
Max
Maximum lead temperature for
soldering purpose
Value
TO-220
TO-247
0.89
62.5 50
300
Unit
TO-220FP
4.17 °C/W
62.5 °C/W
°C
3/16


3Pages


STP13NK50Z 電子部品, 半導体
www.DataSEhleeect4tUri.ccoaml characteristics
STF13NK50Z - STP13NK50Z - STW13NK50Z
Table 8. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=400 V, ID=6.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 19)
Min. Typ. Max. Unit
18 ns
23 ns
61 ns
24 ns
Table 9. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A, VGS=0
ISD=6.5 A,
di/dt = 100 A/µs,
VDD=40 V, Tj=25 °C
(see Figure 21)
ISD=6.5 A,
di/dt = 100 A/µs,
VDD=40 V, Tj=150 °C
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
11 A
44 A
1.6 V
380 ns
3.4 µC
18 A
425 ns
3.9 µC
18.5 A
6/16

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部品番号部品説明メーカ
STP13NK50Z

Power MOSFETs

ST Microelectronics
ST Microelectronics


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