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IRF8513PBF の電気的特性と機能

IRF8513PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF8513PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF8513PBF Datasheet, IRF8513PBF PDF,ピン配置, 機能
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PD - 96196
IRF8513PbF
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
HEXFET® Power MOSFET
VDSS
RDS(on) max
::30V
Q1 15.5m
Q2 12.7m
@VGS = 10V
@VGS = 10V
ID
8.0A
11A
Benefits
l Low Gate Charge and Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% Tested for RG
l Lead-Free (Qualified to 260°C Reflow)
l RoHS Compliant (Halogen Free)
B
T! 
T! 
B! 
9
 T ÃÃ9!
 T ÃÃ9!
 T ÃÃ9!
SO-8
Description
The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard
SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation
including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make
this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook
and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Q1 Max.
8.0
6.2
64
1.5
1.05
0.01
30
± 20
Q2 Max.
11
9.0
88
2.4
1.68
0.02
-55 to + 175
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Q1 Max.
42
100
Q2 Max.
42
62.5
Units
°C/W
Notes  through … are on page 11
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
11/05/08

1 Page





IRF8513PBF pdf, ピン配列
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100
10
1
Typical Characteristics
Q1 - Control FET
TOP
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
100
10
1
IRF8513PbF
Q2 - Synchronous FET
TOP
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
0.1
2.5V
0.01
0.1
60µs PULSE WIDTTHj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
10
TOP
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
100
0.1
2.5V
0.01
0.1
60µs PULSE WIDTTHj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10
TOP
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100
10 TJ = 175°C
TJ = 25°C
1
VDS = 15V
60µs PULSE WIDTH
0.1
123456
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
www.irf.com
10 TJ = 175°C
TJ = 25°C
1
VDS = 15V
60µs PULSE WIDTH
0.1
123456
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
3


3Pages


IRF8513PBF 電子部品, 半導体
IRF8513PbF
www.DataSheet4U.com
Q1 - Control FET
9
8
7
6
5
4
3
Typical Characteristics
12
10
8
6
4
Q2 - Synchronous FET
2
1
0
25 50 75 100 125 150 175
TA , Ambient Temperature (°C)
Fig 19. Maximum Drain Current vs. Ambient Temp.
2
0
25 50 75 100 125 150 175
TA , Ambient Temperature (°C)
Fig 20. Maximum Drain Current vs. Ambient Temp.
2.5 2.5
2.0
ID = 250µA
1.5
ID = 25µA
1.0
2.0
ID = 250µA
1.5
ID = 25µA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 21. Threshold Voltage vs. Temperature
250
ID
200
TOP
2.13A
4.20A
BOTTOM 6.40A
150
100
50
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 22. Threshold Voltage vs. Temperature
300
ID
250
TOP
2.62A
5.45A
BOTTOM 8.60A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 23. Maximum Avalanche Energy vs. Drain Current
6
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 24. Maximum Avalanche Energy vs. Drain Current
www.irf.com

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部品番号部品説明メーカ
IRF8513PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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