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PDF IRF8707PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF8707PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96118A
IRF8707PbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated
DC-DC Converters in Networking
Systems
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
:11.9m @VGS = 10V 6.2nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Description
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
± 20
11
9.1
88
2.5
1.6
Units
V
A
W
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
10/24/07
1 page  
www.DataSheet4U.com
12
10
8
6
4
2
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
IRF8707PbF
2.5
2.2
1.9 ID = 250µA
1.6 ID = 25µA
1.3
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.1
0.01
0.001
1E-006
PDM
R 1R 1
R 2R 2
R 3R 3
R 4R 4
Ri (°C/W) τi (sec)
t1
τJ τJ
τ1 τ1
Ci= τi/Ri
τ2 τ2
τ3 τ3
τ4 τ4
τAτA
2.2284
7.0956
25.4895
0.000169
0.013738
0.68725
Notes:
1. Duty factor D = t1 / t 2
t2
Ci= τi/Ri
15.1981 25.8
2. Peak T J = P DM x Z thJA + TA
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF8707PBF.PDF ] | |
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