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Número de pieza | IRF8721PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD - 97119
IRF8721PbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
HEXFET® Power MOSFET
VDSS RDS(on) max
Qg
30V 8.5m:@VGS = 10V 8.3nC
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
l Very Low Gate Charge
l Low RDS(on) at 4.5V VGS
l Low Gate Impedance
l Fully Characterized Avalanche Voltage
S1
S2
S3
G4
AA
8D
7D
6D
5D
and Current
l 20V VGS Max. Gate Rating
l Lead-Free
Description
Top View
SO-8
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
30
± 20
14
11
110
2.5
1.6
V
A
W
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/30/07
1 page www.DataSheet4U.com
IRF8721PbF
16
12
8
4
0
25
50 75 100 125
TA, Ambient Temperature (°C)
150
2.4
2.2
2.0
1.8 ID = 25μA
1.6
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τJ
τJ
τ1
τ1
R1R1
CiC=iτi/Ri/iRi
R2R2
τ2
τ2
R3R3
R4R4
τa
Ri (°C/W)
1.935595
τι (sec)
0.000148
τ3 τ4
τ3 τ4
7.021545 0.019345
26.61013 0.81305
14.43961 26.2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10 100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRF8721PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF8721PBF | Power MOSFET ( Transistor ) | International Rectifier |
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