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IRFH7914PBF の電気的特性と機能

IRFH7914PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFH7914PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFH7914PBF Datasheet, IRFH7914PBF PDF,ピン配置, 機能
IRFH7914PbF
Applications
l Control MOSFET of Sync-Buck Converters
used for Notebook Processor Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
8.7m@VGS = 10V 8.3nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
PQFN 5X6 mm
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
gRθJA
Junction-to-Case
Junction-to-Ambient
Notes  through … are on page 9
Max.
30
± 20
15
12
35
110
3.1
2.0
0.025
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
7.2
40
Units
°C/W
1 www.irf.com © 2013 International Rectifier
August 16, 2013

1 Page





IRFH7914PBF pdf, ピン配列
IRFH7914PbF
1000
60µs PULSE WIDTH
Tj = 25°C
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1000
100
60µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
0.1
0.1
2.3V
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1 2.3V
0.1
0.1
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
10 TJ = 150°C
1
0.1
1
TJ = 25°C
VDS = 15V
60µs PULSE WIDTH
23456
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0
ID = 14A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3 www.irf.com © 2013 International Rectifier
August 16, 2013


3Pages


IRFH7914PBF 電子部品, 半導体
IRFH7914PbF
25
ID = 14A
20
15
TJ = 125°C
10
TJ = 25°C
5
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
80
70
TOP
ID
3.1A
60
4.0A
BOTTOM 11A
50
40
30
20
10
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-V D D
Fig 15a. Switching Time Test Circuit
VDS
90%
IAS
Fig 14b. Unclamped Inductive Waveforms
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
6 www.irf.com © 2013 International Rectifier
August 16, 2013

6 Page



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部品番号部品説明メーカ
IRFH7914PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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