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IRFH7921PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFH7921PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFH7921PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
PD - 97335
IRFH7921PbF
Applications
l High Frequency Point-of-Load Synchronous Buck
Converter for Applications in Neworking &
Computing Systems
l Optimized for Control FET Applications
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
8.5mΩ@VGS = 10V 9.3nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
D
D
D
D
PQFN
S
S
S
G
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
gRθJA
Junction-to-Case
Junction-to-Ambient
Notes through
are on page 9
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Max.
30
± 20
15
12
34
120
3.1
2.0
0.025
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
7.9
40
Units
°C/W
1
07/15/08
1 Page www.DataSheet4U.com
IRFH7921PbF
1000
100
≤60µs PULSE WIDTH
Tj = 25°C
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
0.1
0.01
0.1
2.3V
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
≤60µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1 2.3V
0.1
0.1
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
10 TJ = 150°C
1
0.1
1
TJ = 25°C
VDS = 15V
≤60µs PULSE WIDTH
23456
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1.6
ID = 15A
1.4 VGS = 10V
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
3Pages www.DataSheet4U.com
IRFH7921PbF
20
18 ID = 15A
16
14
12
TJ = 125°C
10
8
6 TJ = 25°C
4
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
6
120
ID
100
TOP
2.2A
3.1A
BOTTOM 12A
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-V D D
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
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6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFH7921PBF | Power MOSFET ( Transistor ) | International Rectifier |