|
|
PDF IRFH7932PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH7932PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFH7932PBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
VDSS
30V
IRFH7932PbF
HEXFET® Power MOSFET
RDS(on) max
Qg
:3.3m @VGS = 10V 34nC
D
D
D
D
PQFN
S
S
S
G
Orderable part number
IRFH7932TRPbF
IRFH7932TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
gRθJA Junction-to-Ambient
Max.
30
± 20
25
20
104
200
3.4
2.2
0.03
-55 to + 150
Typ.
–––
–––
Max.
2.2
37
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through
are on page 10
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 11, 2014
1 page  
IRFH7932PbF
30
25
20
15
10
5
0
25
50 75 100 125
TJ , Ambient Temperature (°C)
150
2.0
ID = 100µA
1.6
1.2
0.8
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
SINGLE PULSE
0.01 ( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R4R4
Ri (°C/W)
0.54874
τCτ 2.05644
τ4τ4 7.36536
6.44303
τi (sec)
0.000128
0.023270
1.0678
38.4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 11, 2014
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFH7932PBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFH7932PBF | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |