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BUK9620-55A の電気的特性と機能

BUK9620-55AのメーカーはNXP Semiconductorsです、この部品の機能は「(BUK9520-55A / BUK9620-55A) TrenchMOS logic level FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUK9620-55A
部品説明 (BUK9520-55A / BUK9620-55A) TrenchMOS logic level FET
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BUK9620-55A Datasheet, BUK9620-55A PDF,ピン配置, 機能
www.DataSheet4U.com
BUK9520-55A; BUK9620-55A
TrenchMOS™ logic level FET
Rev. 01 — 29 January 2001
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9520-55A in SOT78 (TO-220AB)
BUK9620-55A in SOT404 (D 2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Logic level compatible.
3. Applications
s Automotive and general purpose power switching:
c
c x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
mb
3 source (s)
mb mounting base;
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
Symbol
d
g
MBB076
s

1 Page





BUK9620-55A pdf, ピン配列
Philips Semiconductors
www.DataSheet4U.com
BUK9520-55A; BUK9620-55A
TrenchMOS™ logic level FET
120
Pder
(%) 100
03na19
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
Pder
=
-------P----t--o--t-------
P
×
100
%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
Ider
(%)
100
03aa24
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
VGS 4.5 V
Ider = -I------I---D-------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
ID
(A)
RDSon = VDS/ ID
102
03nc94
tp = 10 us
10 P
δ
=
tp
T
tp
T
1
1
t
D.C.
10
VDS (V)
100 us
1 ms
10 ms
100 ms
102
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07794
Product specification
Rev. 01 — 29 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
3 of 15


3Pages


BUK9620-55A 電子部品, 半導体
Philips Semiconductors
www.DataSheet4U.com
BUK9520-55A; BUK9620-55A
TrenchMOS™ logic level FET
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol Parameter
Source-drain diode
VSD source-drain (diode forward)
voltage
trr reverse recovery time
Qr recovered charge
Conditions
IS = 25 A; VGS = 0 V;
Figure 15
IS = 20 A; dIS/dt = 100 A/µs
VGS = 10 V; VDS = 30 V
Min
Typ Max Unit
0.85 1.2
52
81
V
ns
nC
ID 200
(A)
180
160
140
120
100
80
60
40
20
0
0
VGS (V) = 8
9
03nc91
10
7
6
5
4
3
2.2
2 4 6 8 10
VDS (V)
30
RDSon
(m)
25
03nc90
20
15
10
2 4 6 8 VGS (V) 10
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
50
RDSon
(m)
40 VGS (V) =3 3.2 3.4 3.6 3.8 4
03nc92
5
30
20
10
0
Tj = 25 °C
50 100 ID (A) 150
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa28
60 100 140 180
Tj (oC)
a = -------R----D----S--o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07794
Product specification
Rev. 01 — 29 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
6 of 15

6 Page



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共有リンク

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部品番号部品説明メーカ
BUK9620-55

TrenchMOS transistor Logic level FET

NXP Semiconductors
NXP Semiconductors
BUK9620-55

TrenchMOS transistor Logic level FET

NXP Semiconductors
NXP Semiconductors
BUK9620-55A

(BUK9520-55A / BUK9620-55A) TrenchMOS logic level FET

NXP Semiconductors
NXP Semiconductors


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