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PDF STGW38IH120D Data sheet ( Hoja de datos )
| Número de pieza | STGW38IH120D | |
| Descripción | IGBT | |
| Fabricantes | ST Microelectronics | |
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STGW38IH120D
Features
■ Low saturation voltage
■ High current capability
■ Low switching loss
■ Very soft ultra fast recovery antiparallel diode
Applications
■ Induction cooking, microwave oven
■ Soft switching application
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior. This device is well suited for the
resonant or soft switching application.
30 A - 1200 V - very fast IGBT
Preliminary Data
3
2
1
TO-247 long leads
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW38IH120D
GW38IH120D
Package
TO-247 long leads
Packaging
Tube
May 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
Tc= 125 °C (see Figure 17)
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
Tc= 125 °C (see Figure 17)
Min. Typ. Max. Unit
46
10
1660
ns
ns
A/µs
45
12
1500
ns
ns
A/µs
102 ns
284 ns
180 ns
200 ns
424 ns
316 ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
1.5 mJ
3.4 mJ
4.9 mJ
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
Tc= 125 °C (see Figure 17)
2.3 mJ
6.4 mJ
8.7 mJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
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4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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