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PDF 5S0765C Data sheet ( Hoja de datos )
| Número de pieza | 5S0765C | |
| Descripción | LA5S0765C | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 5S0765C (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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KA5S-SERIES
KA5S0765C/KA5S0965/KA5S12656/KA5S1265
Fairchild Power Switch(FPS)
Features
• Wide Operating Frequency Range Up to 150kHz
• Lowest Cost SMPS Solution
• Lowest External Components
• Low Start-up Current (Max:170µA)
• Low Operating Current (Max:12mA)
• Internal High Voltage SenseFET
• Over Voltage Protection With Latch Mode (Min23V)
• Over Load Protection With Latch Mode
• Over Current Protection With Latch Mode
• Internal Thermal Protection With Latch Mode
• Pulse By Pulse Over Current Limiting
• Under Voltage Lockout With Hysteresis
• External Sync. Terminal
Internal Block Diagram
TO-220-5L
1
TO-3P-5L
1
1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync.
VCC
3
VCC UVLO
+
-
15/9V
Vref
Soft Start
& Sync
5
VREF
Feedback 4
0.95mA
4µA
-
Vth.sy
+
7V
6V
2.5V
VREF
VCC
R
2.5V
OSC CLK
-
+
Voffset
+
-
Bias
VREF UVLO
SQ
R
OLP
(Vfb=7.5V)
TSD
(Tj=160°C)
OVP
(VCC=25V)
1µs Window
Open Circuit
S
Q
R
Shutdown Latch
OCP
(VS=1.1V)
Power-on Reset
(VCC=6.5V)
Drain
1
SenseFET
VS
Rsense
2 GND
©2003 Fairchild Semiconductor Corporation
Rev.1.0.5
1 page  
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KA5S-SERIES
Electrical Characteristics (SFET Part) (Continued)
(Ta = 25°C unless otherwise specified)
Parameter
KA5S12656
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source On Resistance(1)
Forward Transconductance(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
KA5S1265
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance(1)
Forward Transconductance(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Symbol
Conditions
Min. Typ. Max. Unit
BVDSS VGS=0V, ID=50µA
650 -
-
IDSS
VDS=Max., Rating, VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
- 50
- 200
RDS(on) VGS=10V, ID=6.0A
- 0.72 0.9
gfs VDS=50V, ID=4.0A
5.7 -
-
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f = 1MHz
- 2700 -
- 300 -
- 61 -
td(on) VDD=0.5B VDSS, ID=12.0A - 18 -
tr
td(off)
(MOSFET switching
time is essentially
independent of operating
- 37 -
- 88 -
tf temperature)
- 36 -
Qg
VGS=10V, ID=12.0A,
VDS=0.5B VDSS(MOSFET
-
Qgs switching time is essentially -
independent of operating
Qgd temperature)
-
- 140
20 -
69 -
V
µA
µA
Ω
S
pF
nS
nC
BVDSS VGS=0V, ID=50µA
650 -
-
IDSS
VDS=Max., Rating, VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
- 50
- 200
RDS(on) VGS=10V, ID=6.0A
- 0.72 0.9
gfs VDS=50V, ID=4.0A
5.7 -
-
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f = 1MHz
- 2700 -
- 300 -
- 61 -
td(on) VDD=0.5BVDSS, ID=12.0A
- 18 -
tr (MOSFET switching time is - 37 -
td(off)
tf
essentially independent of
operating temperature)
- 88 -
- 36 -
Qg
VGS=10V, ID=12.0A,
VDS=0.5B VDSS(MOSFET
-
Qgs switching time is essentially -
independent of operating
Qgd temperature)
-
- 140
20 -
69 -
V
µA
µA
Ω
S
pF
nS
nC
Note:
1. Pulse Test : Pulse width ≤ 300uS, Duty Cycle ≤ 2%
2.MOSFET switching time is essentially independent of operating temperature
3. S = -1--
R
5
5 Page 
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Package Dimensions (Continued)
TO-3P-5L(Forming)
KA5S-SERIES
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet 5S0765C.PDF ] | |
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