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MRF6S18140HSR3のメーカーはFreescale Semiconductorです、この部品の機能は「RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs」です。 |
部品番号 | MRF6S18140HSR3 |
| |
部品説明 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | ||
メーカ | Freescale Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMRF6S18140HSR3ダウンロード(pdfファイル)リンクがあります。 Total 12 pages
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applications with frequencies from 1805
to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
www.datasahpepeltic4au.tcioonms.
• PPTyoapugtiicn=agl,22T9-rCaWfafairctrtiseCrAoNdveg-s.C, D8FMuTlhlAFroPrueegqrhfuoer1nm3c)aynCBcheaa:nnVdn,DeIDlSB=-a92n58dCwVDiodMltthsA,=I(DP1Q.il2o=2t,81S82yM0n0cH,mz.A,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — - 36 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 50.5 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S18140H
Rev. 0, 9/2006
MRF6S18140HR3
MRF6S18140HSR3
1805 - 1880 MHz, 29 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S18140HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S18140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 73°C, 29 W CW
RθJC
0.31
0.35
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
1
1 Page VBIAS
R3
+
C8
B1
R1
R5
C4
C6
RF
www.datasheeINt4PuU.TcomZ1 Z2 Z3 Z4 Z5 Z6
Z7 Z8 Z9 Z10 Z11 Z12
Z14
Z13
C1
R4
+
C9
R6
B2
R2
C5
DUT
Z15
C7 C3
VSUPPLY
+
C10 C12 C13 C16
Z16
Z18 Z19 Z20 Z21 Z22
RF
Z23 OUTPUT
C2
Z17
C11 C14 C15
Z1 0.166″ x 0.082″ Microstrip
Z2 0.250″ x 0.334″ Microstrip
Z3 0.140″ x 0.340″ Microstrip
Z4 0.092″ x 0.164″ Microstrip
Z5 0.130″ x 0.234″ Microstrip
Z6 0.109″ x 0.082″ Microstrip
Z7 0.070″ x 0.082″ Microstrip
Z8 0.350″ x 0.644″ Microstrip
Z9 0.092″ x 0.420″ Microstrip
Z10 0.720″ x 0.082″ Microstrip
Z11 0.090″ x 0.485″ x 0.580″ Taper
Z12 0.342″ x 1.070″ Microstrip
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
0.108″ x 1.070″ Microstrip
0.960″ x 0.046″ Microstrip
0.084″ x 0.046″ Microstrip
0.996″ x 0.080″ Microstrip
1.015″ x 0.080″ Microstrip
0.099″ x 1.070″ Microstrip
0.516″ x 1.070″ Microstrip
0.292″ x 0.288″ Microstrip
0.198″ x 0.114″ Microstrip
0.372″ x 0.080″ Microstrip
1.181″ x 0.080″ Microstrip
DS Electronics GX0300, 0.030″, εr = 2.55
Figure 1. MRF6S18140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S18140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
B1, B2
47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 2743019447
C1, C2
39 pF Chip Capacitors
700B390FW500XT
C3 0.1 pF Chip Capacitor
100B0R1BP500X
C4, C5, C12, C13,
C14, C15
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
C6, C7, C10, C11
9.1 pF Chip Capacitors
600B9R1BT250XT
C8, C9
47 μF, 50 V Electrolytic Capacitors
MVK50VC47RM8X10TP
C16
470 μF, 63 V Electrolytic Capacitor
NACZF471M63V
R1, R2
12 Ω, 1/8 W Resistors
CRCW120612R0F100
R3, R4
1.0 KΩ, 1/8 W Resistors
CRCW12061001F100
R5, R6
560 KΩ, 1/8 W Chip Resistors
CRCW12065602F101
Manufacturer
Fair - Rite
ATC
ATC
Murata
ATC
United Chemi - Con
Nippon Chemi - Con
Dale/Vishay
Dale/Vishay
Dale/Vishay
RF Device Data
Freescale Semiconductor
MRF6S18140HR3 MRF6S18140HSR3
3
3Pages TYPICAL CHARACTERISTICS
−10
VDD = 28 Vdc, IDQ = 1200 mA
−20 f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two−Tone Measurements
−30
www.datasheet4u.com
−40
3rd Order
−50
−60
7th Order
5th Order
−70
1
10 100 400
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−5
−10
VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA
Two−Tone Measurements,
−15 (f1 + f2)/2 = Center Frequency of 1840 MHz
−20
−25
−30 IM3−U
−35 IM3−L
−40 IM5−U
−45
−50
−55
1
IM5−L
IM7−L
IM7−U
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
60
Ideal
59 P6dB = 53.90 dBm (245.47 W)
58
57 P3dB = 53.36 dBm (216.77 W)
56
55 P1dB = 52.6 dBm (182.64 W)
54
53
Actual
52
51 VDD = 28 Vdc, IDQ = 1200 mA
50
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 1840 MHz
49
32 33 34 35 36 37 38 39 40 41 42 43 44
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
50
45
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1838.75 MHz, f2 = 1841.25 MHz
40 2−Carrier N−CDMA, 2.5 MHz Carrier
35 Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
30 @ 0.01% Probability (CCDF)
IM3
−30_C
−20
25_C
−25
−30
85_C
−35
−40
25 −45
20
15 TC = −30_C
10
5
ηD
Gps
ACPR
−50
85_C
25_C
−55
−60
−65
0 −70
1 10 100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
MRF6S18140HR3 MRF6S18140HSR3
6
RF Device Data
Freescale Semiconductor
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
MRF6S18140HSR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor |