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IXTK150N15P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTK150N15P
部品説明 Polar N-channel MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTK150N15P Datasheet, IXTK150N15P PDF,ピン配置, 機能
Advanced Technical Information
PolarHTTM
Power MOSFET
IXTQ 150N15P
IXTK 150N15P
www.datasheet4u.com
N-Channel Enhancement Mode
VDSS = 150 V
ID25 = 150 A
RDS(on) 13 m
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 M
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 175°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-264
150 V
150
V
G
DS
±20 V
(TAB)
±30 V TO-264(SP) (IXTK)
150 A
75 A
340 A
60 A
80 mJ G
2.5 J
DS
D (TAB)
10 V/ns
714 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
10 g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
150 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175°C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
13 m
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99299(01/05)

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Polar N-channel MOSFETs

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