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PDF IXTQ150N06P Data sheet ( Hoja de datos )
| Número de pieza | IXTQ150N06P | |
| Descripción | Polar N-channel MOSFETs | |
| Fabricantes | IXYS Corporation | |
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PolarHTTM
Power MOSFET
www.daNtas-hCeeht4aun.cnomel Enhancement Mode
Advanced Technical Information
IXTQ 150N06P
VDSS =
ID25 =
=RDS(on)
60 V
150 A
10 mΩ
TO-3P (IXTQ)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDRMS
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
package for 10s
Mounting torque
Maximum Ratings
60 V G
55 V
DS
(TAB)
±20 V
±30
V G = Gate
D = Drain
150
A S = Source
TAB = Drain
75 A Features
280 A
60 A z International standard packages
z Unclamped Inductive Switching (UIS)
40 mJ rated
1.0 J z Low package inductance
- easy to drive and to protect
10 V/ns
480
-55 ... +175
175
-55 ... +150
300
260
W Advantages
°C z Easy to mount
°C z Space savings
°C z High power density
°C
°C
1.13/10 Nm/lb.in.
5.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
60 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
8 10 mΩ
© 2004 IXYS All rights reserved
DS99254(11/04)
1 page  
www.datasheet41u. 0.c0om
0.10
0.01
0.1
IXTQ 150N06P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1 10 100
Pu ls e W id th - m illis e c o n d s
1000
© 2004 IXYS All rights reserved
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTQ150N06P.PDF ] | |
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