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PDF IXTT140N10P Data sheet ( Hoja de datos )
| Número de pieza | IXTT140N10P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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PolarHTTM
Power MOSFET
IXTQ 140N10P
IXTT 140N10P
www.datasheet4u.com
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
≤RDS(on)
100 V
140 A
11 mΩ
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 4 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
Maximum Ratings
100 V
100 V
±20 V
±30 V
140 A
75 A
300 A
60 A
80 mJ
2.5 J
TO-3P (IXTQ)
G
DS
TO-268 (IXTT)
(TAB)
10 V/ns
600 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
260 ° C
1.13/10 Nm/lb.in.
5.5 g
5.0 g
GS
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
100 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175° C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 300 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
11 m Ω
9 mΩ
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99133E(12/05)
1 page  
www.datasheet14u. 0.c0om
0.10
0.01
0.1
IXTQ 140N10P
IXTT 140N10P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1 10 100
Pu ls e W id th - m illis e c o n d s
1000
© 2006 IXYS All rights reserved
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTT140N10P.PDF ] | |
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