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IXTK100N25P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTK100N25P
部品説明 PolarHT Power MOSFET N-Channel Enhancement Mode
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTK100N25P Datasheet, IXTK100N25P PDF,ピン配置, 機能
Advanced Technical Information
PolarHTTM
Power MOSFET
www.datasheet4u.com
N-Channel Enhancement Mode
IXTQ 100N25P
IXTK 100N25P
IXTT 100N25P
VDSS =
ID25
RDS(on)
=
=
250 V
100 A
27 m
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-264
TO-268
250 V
250 V
±20 V
100 A
75 A
250 A
60 A
60 mJ
2.0 J
10 V/ns
600 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
10 g
5g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
250 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
27 m
G
DS
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TO-268 (IXTT)
(TAB)
GS
TO-264(SP) (IXTK)
D (TAB)
G DS
D (TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99118B(07/04)

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PolarHT Power MOSFET N-Channel Enhancement Mode

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