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11N60S5 の電気的特性と機能

11N60S5のメーカーはInfineon Technologies AGです、この部品の機能は「SPP11N60S5」です。


製品の詳細 ( Datasheet PDF )

部品番号 11N60S5
部品説明 SPP11N60S5
メーカ Infineon Technologies AG
ロゴ Infineon Technologies AG ロゴ 




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11N60S5 Datasheet, 11N60S5 PDF,ピン配置, 機能
Cool MOS™ Power Transistor
www.daFtaeshaeteut4rue.com
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
SPP11N60S5, SPB11N60S5
SPI11N60S5
P-TO262
VDS
RDS(on)
ID
600
0.38
11
V
A
P-TO263-3-2
P-TO220-3-1
2
P-TO220-3-1
123
Type
SPP11N60S5
SPB11N60S5
SPI11N60S5
Package
P-TO220-3-1
P-TO263-3-2
P-TO262
Ordering Code
Q67040-S4198
Q67040-S4199
Q67040-S4338
Marking
11N60S5
11N60S5
11N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 5.5 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
11
7
22
340
0.6
11
±20
±30
125
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.1
Page 1
2004-03-30

1 Page





11N60S5 pdf, ピン配列
SPP11N60S5, SPB11N60S5
SPI11N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
www.daPtasahreaetm4u.ecotmer
Symbol
Conditions
min.
Characteristics
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,3) Co(er)
energy related
Effective output capacitance,4) Co(tr)
time related
VDS2*ID*RDS(on)max,
ID=7A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
-
-
-
-
-
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
tr
t d(off)
tf
VDD=350V, VGS=0/10V,
ID=11A, RG=6.8
-
-
-
-
Values
typ. max.
6-
1460
610
21
45
-
-
-
-
85 -
130 -
35 -
150 225
20 30
Unit
S
pF
pF
ns
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=350V, ID=11A
Gate to drain charge
Gate charge total
Qgd
Qg
VDD=350V, ID=11A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=11A
- 10.5 - nC
- 24 -
- 41.5 54
- 8 -V
1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.1
Page 3
2004-03-30


3Pages


11N60S5 電子部品, 半導体
5 Typ. output characteristic
www.daItDash=eeft4(uV.cDomS); Tj=150°C
parameter: tp = 10 µs, VGS
18
A 20V
12V
10V
14
12
SPP11N60S5, SPB11N60S5
SPI11N60S5
6 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
2
9V
m
8V
10 20V
1 12V
8 10V
7V 9V
6 8V
7V
0.5 6V
4
6V
2
00 5 10 15 V 25
VDS
00 2 4 6 8 10 12 14 A 18
ID
7 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
2.1 SPP11N60S5
1.8
8 Typ. transfer characteristics
ID= f ( VGS ); VDS2 x ID x RDS(on)max
parameter: tp = 10 µs
32
A
1.6 24
1.4
20 25 °C
1.2 150 °C
1 16
0.8 12
0.6
98%
0.4 typ
0.2
8
4
0-60 -20 20
60 100 °C
180
Tj
00 4 8 12 V 20
VGS
Rev. 2.1
Page 6
2004-03-30

6 Page



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共有リンク

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部品番号部品説明メーカ
11N60S5

SPP11N60S5

Infineon Technologies AG
Infineon Technologies AG


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