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PDF STL20NM20N Data sheet ( Hoja de datos )
| Número de pieza | STL20NM20N | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL20NM20N
N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT™
ULTRA LOW GATE CHARGE MDmesh™ II MOSFET
wwTwa.bdaletas1h:eGet4eun.ceormal Features
TYPE
VDSS
RDS(on)
ID
STL20NM20N
200 V
< 0.105 Ω 20 A
s WORLDWIDE LOWEST GATE CHARGE
s TYPICAL RDS(on) = 0.088Ω
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE (1mm MAX)
s VERY LOW THERMAL RESISTANCE
s LOW GATE RESISTANCE
s LOW INPUT CAPACITANCE
s HIGH dv/dt and AVALANCHE CAPABILITIES
DESCRIPTION
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technol-
ogy to lower voltages. The device exhibits world-
wide lowest gate charge for any given on-
resistance.Its use is therefore ideal as primary
switch in isolated DC-DC converters for Telecom
and Computer applications.Used in combination
with secondary-side low-voltage STripFETTM prod-
ucts, it contributes to reducing losses and boosting
efficiency.The new PowerFLAT™ package allows
a significant reduction in board space without com-
promising performance.
Figure 1: Package
PowerFlat (6x5)
(Chip Scale Package)
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmeshTM family is very suitable for increas-
ing power density allowing system miniaturization
and higher efficiencies
Table 2: Order Codes
SALES TYPE
STL20NM20N
MARKING
L20NM20N
PACKAGE
PowerFLAT™(6x5)
PACKAGING
TAPE & REEL
June 2005
Rev. 3
1/9
1 page  
STL20NM20N
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
www.datasheet4u.com
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 14: Normalized BVdss vs Temperature
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STL20NM20N.PDF ] | |
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