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PDF IRLSL4030PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLSL4030PBF | |
| Descripción | 100V Single N-Channel HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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Applications
wwllw.dHDatiCagshhMeEeotf4tfouic.rcieoDmnrcivyeSynchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
G
PD - 97370
IRLS4030PbF
IRLSL4030PbF
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ. 3.4mΩ
max. 4.3mΩ
S ID
180A
GDS
D2Pak
IRLS4030PbF
GDS
TO-262
IRLSL4030bF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case jk
RθJA Junction-to-Ambient (PCB Mount) ij
G
Gate
D
Drain
S
Source
Max.
180
130
730
370
2.5
± 16
21
-55 to + 175
300
305
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
02/12/09
1 page  
IRLS/SL4030PbF
1
D = 0.50
0.1 0.20
www.datasheet4u.com
0.01
0.10
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci τi/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.0477 0.000071
τ3τ3 0.1631 0.000881
0.1893 0.007457
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100 0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
10 0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
350 Notes on Repetitive Avalanche Curves , Figures 14, 15:
TOP
Single Pulse
(For further info, see AN-1005 at www.irf.com)
300
BOTTOM 1.0% Duty Cycle
ID = 110A
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
250
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
200 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
150
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
100 25°C in Figure 14, 15).
tav = Average time in avalanche.
50 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRLSL4030PBF.PDF ] | |
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