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IRLS4030PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLS4030PBF
部品説明 100V Single N-Channel HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLS4030PBF Datasheet, IRLS4030PBF PDF,ピン配置, 機能
Applications
wwllw.dHDatiCagshhMeEeotf4tfouic.rcieoDmnrcivyeSynchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
G
PD - 97370
IRLS4030PbF
IRLSL4030PbF
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ. 3.4m
max. 4.3m
S ID
180A
GDS
D2Pak
IRLS4030PbF
GDS
TO-262
IRLSL4030bF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case jk
RθJA Junction-to-Ambient (PCB Mount) ij
G
Gate
D
Drain
S
Source
Max.
180
130
730
370
2.5
± 16
21
-55 to + 175
300
305
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
02/12/09

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