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PDF IRLBA3803 Data sheet ( Hoja de datos )
| Número de pieza | IRLBA3803 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRLBA3803 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 91841C
www.datasheet4u.com
IRLBA3803
HEXFET® Power MOSFET
● Logic-Level Gate Drive
● Advanced Process Technology
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Purchase IRLBA3803/P for solder plated option.
Description
G
D VDSS = 30V
RDS(on) = 0.005Ω
ID = 179AV
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The Super-220 is a package that has been designed to have the same mechanical
outline and pinout as the industry standard TO-220 but can house a considerably
larger silicon die. It has increased current handling capability over both the TO-220
and the much larger TO-247 package. This makes it ideal to reduce component
count in multiparalled TO-220 applications, reduce system power dissipation,
upgrade existing designs or have TO-247 performance in a TO-220 outline.
Super - 220
This package has also been designed to meet automotive qualification standard
Q101.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyRU
Avalanche CurrentQU
Repetitive Avalanche EnergyQ
Peak Diode Recovery dv/dt SU
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
179 V
126V
720
270
1.8
±16
610
71
27
5.0
-55 to + 175
300 (1.6mm from case )
20
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.5
–––
Max.
0.55
–––
58
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
Units
°C/W
1
05/20/02
1 page  
www.datasheet4u.com
200
160
LIMITED BY PACKAGE
120
80
40
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
IRLBA3803
VDS
VGS
RG
RD
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+V- DD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLBA3803.PDF ] | |
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