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IRLS3036PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLS3036PBF
部品説明 60V Single N-Channel HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLS3036PBF Datasheet, IRLS3036PBF PDF,ピン配置, 機能
Applications
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l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD -97358
IRLS3036PbF
IRLSL3036PbF
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
1.9m
max.
ID (Silicon Limited)
c2.4m
270A
S
ID (Package Limited)
195A
GDS
D2Pak
IRLS3036PbF
GDS
TO-262
IRLSL3036PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
dAvalanche Current
lRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
kJunction-to-Case 11
jJunction-to-Ambient (PCB Mount, steady state)
www.irf.com
Max.
c270
c190
195
1100
380
2.5
±16
8.0
-55 to + 175
300
290
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
12/08/08

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60V Single N-Channel HEXFET Power MOSFET

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