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IRLSL3034PBF の電気的特性と機能

IRLSL3034PBFのメーカーはInternational Rectifierです、この部品の機能は「40V Single N-Channel HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLSL3034PBF
部品説明 40V Single N-Channel HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLSL3034PBF Datasheet, IRLSL3034PBF PDF,ピン配置, 機能
PD -97364
IRLS3034PbF
IRLSL3034PbF
Applications
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l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
40V
:RDS(on) typ.
1.4m
:max. 1.7m
cID (Silicon Limited) 343A
S ID (Package Limited) 195A
DD
S
G
D2Pak
IRLS3034PbF
S
D
G
TO-262
IRLSL3034PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
dAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
klJunction-to-Case
jJunction-to-Ambient (PCB Mount)
www.irf.com
Max.
c343
c243
195
1372
375
2.5
±20
4.6
-55 to + 175
300
x x10lbf in (1.1N m)
255
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.4
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
01/14/09

1 Page





IRLSL3034PBF pdf, ピン配列
100000
10000
TOP
www.datas1h0e0e0t4u.cBoOmTTOM
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
100
60µs PULSE WIDTH
Tj = 25°C
10
2.5V
1
0.1
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10000
1000
100
TJ = 175°C TJ = 25°C
10
1
0.1
1
VDS = 25V
60µs PULSE WIDTH
2345
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
IRLS/SL3034PbF
100000
10000
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
60µs PULSE WIDTH
Tj = 175°C
100
2.5V
10
0.1
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 195A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
5.0
4.5 ID= 185A
4.0
VDS= 32V
VDS= 20V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20 40 60 80 100 120 140
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3


3Pages


IRLSL3034PBF 電子部品, 半導体
IRLS/SL3034PbF
3.0
2.5
2.0
www.datasheet4u.com
1.5
1.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
14
IF = 117A
12 VR = 34V
TJ = 25°C
10 TJ = 125°C
8
6
4
2
0
0 100 200 300 400 500
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
400
IF = 117A
VR = 34V
300 TJ = 25°C
TJ = 125°C
200
14
IF = 78A
12 VR = 34V
TJ = 25°C
10 TJ = 125°C
8
6
4
2
0
0 100 200 300 400 500
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
400
IF = 78A
VR = 34V
300 TJ = 25°C
TJ = 125°C
200
100
0
0 100 200 300 400 500
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
100
0
0 100 200 300 400 500
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRLSL3034PBF

40V Single N-Channel HEXFET Power MOSFET

International Rectifier
International Rectifier


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