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IRLS3034PBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLS3034PBF
部品説明 40V Single N-Channel HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLS3034PBF Datasheet, IRLS3034PBF PDF,ピン配置, 機能
PD -97364
IRLS3034PbF
IRLSL3034PbF
Applications
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l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
40V
:RDS(on) typ.
1.4m
:max. 1.7m
cID (Silicon Limited) 343A
S ID (Package Limited) 195A
DD
S
G
D2Pak
IRLS3034PbF
S
D
G
TO-262
IRLSL3034PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
dAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
klJunction-to-Case
jJunction-to-Ambient (PCB Mount)
www.irf.com
Max.
c343
c243
195
1372
375
2.5
±20
4.6
-55 to + 175
300
x x10lbf in (1.1N m)
255
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.4
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
01/14/09

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