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PDF IRLS3034-7PPBF Data sheet ( Hoja de datos )
| Número de pieza | IRLS3034-7PPBF | |
| Descripción | 40V Single N-Channel HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97362
Applications
wwllw.dHDatiCagshhMeEeotf4tfouic.rcioeDmnrcivyeSynchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRLS3034-7PPbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
40V
1.0mΩ
1.4mΩ
ID (Silicon Limited)
380Ac
S ID (Package Limited) 240A
D
S
SS
S
S
G
D2Pak 7 Pin
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current d
EAR Repetitive Avalanche Energy d
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case kl
RθJA Junction-to-Ambient j
Max.
380c
270c
240
1540
380
2.5
± 20
1.3
-55 to + 175
300
250
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
1/12/09
1 page  
IRFLS3034-7PPbF
1
D = 0.50
0.1 0.20
www.datasheet4u.com
0.01
0.001
1E-006
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
1E-005
0.0001
0.001
R4R4
τCτ
Ri (°C/W)
0.00741
0.05041
τi (sec)
0.000005
0.000038
τ4τ4 0.18384 0.001161
0.15864 0.008809
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
0.01
100
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
300 Notes on Repetitive Avalanche Curves , Figures 14, 15:
TOP
Single Pulse
(For further info, see AN-1005 at www.irf.com)
250
BOTTOM 1.0% Duty Cycle
ID = 220A
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
200
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
150
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
100 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
50 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLS3034-7PPBF.PDF ] | |
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