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IRLS3034-7PPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLS3034-7PPBF
部品説明 40V Single N-Channel HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLS3034-7PPBF Datasheet, IRLS3034-7PPBF PDF,ピン配置, 機能
PD - 97362
Applications
wwllw.dHDatiCagshhMeEeotf4tfouic.rcioeDmnrcivyeSynchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRLS3034-7PPbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
40V
1.0m
1.4m
ID (Silicon Limited)
380Ac
S ID (Package Limited) 240A
D
S
SS
S
S
G
D2Pak 7 Pin
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current d
EAR Repetitive Avalanche Energy d
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case kl
RθJA Junction-to-Ambient j
Max.
380c
270c
240
1540
380
2.5
± 20
1.3
-55 to + 175
300
250
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
1/12/09

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