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PDF K30A Data sheet ( Hoja de datos )
| Número de pieza | K30A | |
| Descripción | MOSFET ( Transistor ) - 2SK30A | |
| Fabricantes | Xiaosheng | |
| Logotipo |  |
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 1. N Channel FET - Toshiba  Hay una vista previa y un enlace de descarga de K30A (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Silicon Junction FETs
LH03 Series of Products interconvert:
2SK30Awww.datasheet4u.com
Silicon N-Chinnel Junction FET
Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and
gain controller for AGC ，electronic switch.
XIAOSHENG
Symbol:
Drain
Gate
Source
Package example:
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Gate to Drain voltage
VGDO
Gate to Source voltage
VGSO
Gate current
IG
Allowable power dissipation
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Ratings
-50
-50
10
250
125
-55 to +125
Unit
V
V
mA
mW
℃
℃
Package
SC-59
SOT-23
TO-92S
* TO-92
TO-18
DSG
312
Electrical Characteristics (Ta=25℃)
Prameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current
IDSS VDS = 10V, VGS = 0V
0.3
6.5 mA
Gate to Source leakage current
IGSS VGS= -30V, VDS = 0V
-1.0 nA
Gate to Drain voltage
VGDS IG = -100μA，VDS = 0V
-50
V
Gate to Source cut-off voltage
VGS(OFF) VDS = 10V, ID = 0.1μA
-0.4
-5.0 V
Forward transfer admittamce
| Yfs | VDS=10V，VGS=0V，f=1KHZ 1.2
mS
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Ciss
VDS=10V，VGS=0V，f=1MHZ
Crss
8.2
2.6
pF
pF
IDSS Rank Classification
Runk
R
IDSS(mA)
0.3 to 0.75
Marking Symbol
035D
O
0.6 to 1.4
035E
Y
1.2 to 3.0
035F
GR
2.6 to 6.5
035G
Xiaosheng Electronic & Telechnology CO. ,LTD.
Room 206 3rd building 195-16 Tianlin RD. Shanghai China
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet K30A.PDF ] | |
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