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IRFB17N60K の電気的特性と機能

IRFB17N60KのメーカーはVishay Siliconixです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB17N60K
部品説明 Power MOSFET ( Transistor )
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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IRFB17N60K Datasheet, IRFB17N60K PDF,ピン配置, 機能
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Power MOSFET
www.datasPheReOt4uD.cUomCT SUMMARY
VDS (V)
600
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
99
Qgs (nC)
32
Qgd (nC)
47
Configuration
Single
0.35
TO-220
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Smaller TO-220 Package
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
TO-220
IRFB17N60KPbF
SiHFB17N60K-E3
IRFB17N60K
SiHFB17N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = 17 A (see fig. 12).
c. ISD 17 A, dI/dt 380 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
LIMIT
600
± 30
17
11
68
2.7
330
17
34
340
11
- 55 to + 150
300d
10
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
N
www.vishay.com
1

1 Page





IRFB17N60K pdf, ピン配列
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.datasheet4u.com
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
www.vishay.com
3


3Pages


IRFB17N60K 電子部品, 半導体
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
www.datasheet4u.com
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91099
S-81243-Rev. B, 21-Jul-08

6 Page



ページ 合計 : 8 ページ
 
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFB17N60K

SMPS MOSFET

International Rectifier
International Rectifier
IRFB17N60K

Power MOSFET ( Transistor )

Vishay Siliconix
Vishay Siliconix
IRFB17N60KPBF

SMPS MOSFET

International Rectifier
International Rectifier


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