DataSheet.jp

IRFB17N60K の電気的特性と機能

IRFB17N60KのメーカーはInternational Rectifierです、この部品の機能は「SMPS MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB17N60K
部品説明 SMPS MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRFB17N60Kダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRFB17N60K Datasheet, IRFB17N60K PDF,ピン配置, 機能
PD - 94578
www.datasheet4u.com
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
VDSS
600V
IRFB17N60K
HEXFET® Power MOSFET
RDS(on) typ.
0.35
ID
17A
Benefits
l Smaller TO-220 Package
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Max.
17
11
68
340
2.7
± 30
11
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
N
Typ.
–––
–––
–––
Max.
330
17
34
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.37
–––
58
Units
°C/W
www.irf.com
1
11/19/02

1 Page





IRFB17N60K pdf, ピン配列
www.datasheet4u.com
1000
100
10
VGS
TOP
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
BOTTOM 5.5V
1
0.1
0.01
0.1
5.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRFB17N60K
100
VGS
TOP
15V
10V
8.0V
7.5V
7.0V
6.5V
10 6.0V
BOTTOM 5.5V
5.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.0
TJ = 150°C
10.0
1.0 TJ = 25°C
0.1
0.0
5.0
VDS = 100V
20µs PULSE WIDTH
6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
11.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
ID = 17A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFB17N60K 電子部品, 半導体
IRFB17N60K
www.datasheet4u.com
600
500
400
300
ID
TOP 7.6A
11A
BOTTOM 17A
VDS
L
15V
DRIVER
R G D.U.T
+
200 - VDD
IAS A
20V
100 tp 0.01
Fig 12c. Unclamped Inductive Test Circuit
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
V(BR)DSS
tp
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
IAS
Fig 12d. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13b. Basic Gate Charge Waveform
www.irf.com

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRFB17N60K データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFB17N60K

SMPS MOSFET

International Rectifier
International Rectifier
IRFB17N60K

Power MOSFET ( Transistor )

Vishay Siliconix
Vishay Siliconix
IRFB17N60KPBF

SMPS MOSFET

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap