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IRFB17N50L の電気的特性と機能

IRFB17N50LのメーカーはVishay Siliconixです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB17N50L
部品説明 Power MOSFET ( Transistor )
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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IRFB17N50L Datasheet, IRFB17N50L PDF,ピン配置, 機能
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
Power MOSFET
www.datasPheReOt4uD.cUomCT SUMMARY
VDS (V)
500
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
130
Qgs (nC)
33
Qgd (nC)
59
Configuration
Single
0.28
D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Low Trr and Soft Diode Recovery
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• ZVS and High Frequency Circuit
• PWM Inverters
TO-220
IRFB17N50LPbF
SiHFB17N50L-E3
IRFB17N50L
SiHFB17N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 3.0 mH, RG = 25 Ω, IAS = 16 A (see fig. 12).
c. ISD 16 A, dI/dt 347 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
LIMIT
500
± 30
16
11
64
1.8
390
16
22
220
13
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1

1 Page





IRFB17N50L pdf, ピン配列
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Top
www.datasheet4u.com
10
Bottom
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100
10
1
TJ = 150 °C
TJ = 25 °C
5.0 V
1
0.1
0.01
0.1
20 μs PULSE WIDTH
TJ = 25 °C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
0.1
4.0
5.0 6.0
VDS = 50 V
20 μs PULSE WIDTH
7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
10
VGS
Top 15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom 5.0 V
1
5.0 V
20 μs PULSE WIDTH
TJ = 125 °C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
ID = 16 A
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
www.vishay.com
3


3Pages


IRFB17N50L 電子部品, 半導体
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
www.datasheet4u.com
800 ID
TOP
7A
10 A
640 BOTTOM 16 A
480
320
160
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91098
S-81263-Rev. A, 21-Jul-08

6 Page



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共有リンク

Link :


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