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PDF 3DK2222A Data sheet ( Hoja de datos )
| Número de pieza | 3DK2222A | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jiangsu Changjiang Electronics | |
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Hay una vista previa y un enlace de descarga de 3DK2222A (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
www.datasheet4u.com
3DK2222A
TRANSISTOR ( NPN )
FEATURES
y Epitaxial planar die construction
y Complementary PNP Type available(MMBT2907ALT1)
MARKING: 1P1
SOT-23
1. BASE
2.EMITTER
3.COLLECTOR
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
PC
TJ, Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Value
75
40
6
600
300
-55to+150
unless otherwise specified）
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
HFE(1)
HFE(2)
HFE(3)
IC= 10μA， IE=0
IC= 10mA， IB=0
IE=10μA， IC=0
VCB=70 V , IE=0
VCE=60V , VBE(off)=3V
VEB= 3V , IC=0
VCE=10V, IC= 150mA
VCE=10V, IC= 0.1mA
VCE=10V, IC= 500mA
75
40
6
100
40
42
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
VBE(sat)
fT
td
tr
tS
tf
IC=500 mA, IB= 50mA
VCE=20V, IC= 20mA
f=100MHz
VCC=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
300
Units
V
V
V
mA
mW
℃
MAX
0.1
0.1
0.1
300
UNIT
V
V
V
μA
μA
μA
0.6
0.3 V
1.2 V
MHz
10 nS
25 nS
225 nS
60 nS
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 3DK2222A.PDF ] | |
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